Please use this identifier to cite or link to this item:
|Type:||Artigo de periódico|
|Title:||Donor 1s-2p Transitions In Doped Gaas-ga1-xalxas Quantum Wells: Effects Of Electric And Magnetic Fields|
|Abstract:||The effects of both electric and magnetic fields on the transition energies between the 1s-like ground state and 2p excited states of hydrogenic donors in a GaAs-Ga1-xAlxAs quantum well are studied. The effective-mass approximation within a variational scheme is adopted with electric and magnetic fields considered in the growth direction of the heterostructure, and treated directly in the variational calculation. Results for the finite-barrier potential are obtained as functions of both applied fields and for different GaAs-Ga1-xAlxAs quantum-well thicknesses, and compared with available infrared magnetospectroscopy measurements on donor-doped quantum wells. Theoretical results indicate that a detailed study of the intradonor absorption spectra together with a proper consideration of the impurity-doping profile are necessary for a qualitative understanding of the experimental results. © 1995 The American Physical Society.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.