Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/95818
Type: Artigo de periódico
Title: Structural And Optoelectronic Properties Of Indium-doped A-ge:h Thin Films
Author: Fajardo F.
Chambouleyron I.
Abstract: This work reports on the structural, optical, and transport properties of rf sputtered In-doped hydrogenated amorphous germanium thin films. It has been found that the incorporation of In induces important changes in the optoelectronic properties of the films. The experimental results may be explained in terms of acceptor levels produced by tetrahedrally coordinated In, in a way similar to In doping of c-Ge. The transition from n-type conduction of as-deposited samples to p-type conduction has been monitored through thermopower measurements. Indium concentrations of the order of 1% induce the pinning of the Fermi energy at 0.45 eV above the valence band edge and a thermally activated conductivity at room temperature having an activation energy of a few meV. The effect is explained in terms of nearest-neighbor hopping between electron states produced by In atoms in a metal-like coordination at defective sites of the Ge network. © 1995 The American Physical Society.
Editor: 
Rights: aberto
Identifier DOI: 10.1103/PhysRevB.52.4965
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0343001804&partnerID=40&md5=81077643e6d2f89cd5ee14a9ff2a03c4
Date Issue: 1995
Appears in Collections:Unicamp - Artigos e Outros Documentos

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