Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/95815
Type: Artigo de periódico
Title: Interfaces, Confinement, And Resonant Raman Scattering In Ge/si Quantum Wells
Author: Brafman O.
Araujo Silva M.A.
Cerdeira F.
Manor R.
Bean J.C.
Abstract: We address the question of confinement of the Ge-Ge mode in five-monolayer-Ge single and multiple quantum wells. Using Raman scattering, our data show strong dependence of the interface quality on the number of quantum wells and thereby on the confinement of both the phonons and the electronic states in the Ge wells. The dependence of line shape and peak position of the Ge-Ge Raman line with laser photon energy gives a clear indication of the existence of terraces in the interfaces of the Ge/Si multiple quantum wells. © 1995 The American Physical Society.
Editor: 
Rights: aberto
Identifier DOI: 10.1103/PhysRevB.51.17800
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0004365388&partnerID=40&md5=bd9b9b853d3f208b32a5541d27819099
Date Issue: 1995
Appears in Collections:Unicamp - Artigos e Outros Documentos

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