Please use this identifier to cite or link to this item:
Type: Artigo de periódico
Title: On The Origin Of Oval Defects In Metalorganic Molecular Beam Epitaxy Of Inp
Author: Cotta M.A.
Hamm R.A.
Chu S.N.G.
Harriott L.R.
Temkin H.
Abstract: We have studied the dependence of oval-shaped defects on growth conditions during metalorganic molecular beam epitaxy of InP. The density of oval defects is independent of growth conditions but strongly dependent on the initial substrate surface preparation. Contaminants existing on the surface prior to growth are indicated as the likely cause of oval defect formation due to local enhancement of metalorganic molecules cracking on the surface and the subsequent formation of group III rich structures. High densities of such defects are shown to degrade the optical properties of InGaAs quantum wells.© 1995 American Institute of Physics.
Rights: aberto
Identifier DOI: 
Date Issue: 1995
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File Description SizeFormat 
2-s2.0-33749648979.pdf691.79 kBAdobe PDFView/Open

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.