Please use this identifier to cite or link to this item:
Type: Artigo de periódico
Title: Indented Barrier Resonant Tunneling Rectifiers
Author: Di Ventra M.
Papp G.
Coluzza C.
Baldereschi A.
Schulz P.A.
Abstract: This article concerns a novel negative-conductance device consisting of a series of N laterally indented barriers which exhibits resonant tunneling under one bias polarity and simple tunneling under the opposite one, thus acting as a rectifier. Electrons undergo resonant tunneling when the bias creates a band profile with N triangular wells which can each contain a resonant state. From 1 to N the addition of each indentation can be used to increase the current density and the rectification ratio, calculated at the current-peak bias at resonance, provided that at a given bias all the states in the triangular wells align each other with the emitter Fermi energy in order to form a resonance along the structure. © 1996 American Institute of Physics.
Rights: aberto
Identifier DOI: 
Date Issue: 1996
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File Description SizeFormat 
2-s2.0-0008468167.pdf380.64 kBAdobe PDFView/Open

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.