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|Type:||Artigo de evento|
|Title:||Effect Of Kinetics On The Nucleation Of Thin Inas Films On Inp By Chemical Beam Epitaxy|
De Mendonca C.A.C.
de Carvalho M.M.G.
|Abstract:||The nucleation of thin InAs films on InP by chemical beam epitaxy was studied. Analysis by atomic force microscopy showed the islanding process to be kinetically controlled. The onset of the process and the island shape were dependent on the substrate misorientation, growth rate and temperature. Furthermore, analysis of island distribution along step edges prior to vertical growth indicated the existence of a step edge barrier altering the diffusion dynamics on the surface.|
|Editor:||IEEE, Piscataway, NJ, United States|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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