Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/95615
Type: Artigo de evento
Title: Effect Of Kinetics On The Nucleation Of Thin Inas Films On Inp By Chemical Beam Epitaxy
Author: Cotta M.A.
De Mendonca C.A.C.
Ito-Landers K.M.
de Carvalho M.M.G.
Martins R.B.
Abstract: The nucleation of thin InAs films on InP by chemical beam epitaxy was studied. Analysis by atomic force microscopy showed the islanding process to be kinetically controlled. The onset of the process and the island shape were dependent on the substrate misorientation, growth rate and temperature. Furthermore, analysis of island distribution along step edges prior to vertical growth indicated the existence of a step edge barrier altering the diffusion dynamics on the surface.
Editor: IEEE, Piscataway, NJ, United States
Rights: fechado
Identifier DOI: 
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0029709316&partnerID=40&md5=76998c8efb69f92c7c7cb964f8eeef35
Date Issue: 1996
Appears in Collections:Unicamp - Artigos e Outros Documentos

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