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|Type:||Artigo de periódico|
|Title:||Influence Of Ch4/h2 Reactive Ion Etching On The Deep Levels Of Si-doped Alxga1-xas (x=0.25)|
Van Hove M.
De Potter M.
Van Rossum M.
|Abstract:||We study the passivation and recovery of shallow and deep levels in Si-doped AlGaAs exposed to CH4/H2 and H2 reactive ion etching (RIE). The carrier concentration depth profile is determined by capacitance-voltage measurements. The activation energy to recover the silicon donors is found to be 1.1 eV for samples exposed to CH4/H2 RIE and 1.3 eV for samples exposed to H2 RIE. We study the behavior of DX centers in Si-doped AlGaAs layers after RIE exposure and subsequent thermal annealing by using deep level transient spectroscopy. For CH4TH2 RIE a new emission is detected at the high temperature side. We identify this emission as the DX3 center, which is assigned to a DX center with three aluminum atoms surrounding the Si donor. This DX center is only detected on the samples exposed to CH4/H2 RIE. We explain the formation of this deep level to the highly selective removal of Ga atoms in favor of Al atoms. Consequently Al-rich regions are created near the surface. © 1996 American Vacuum Society.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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