Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/95606
Type: Artigo de periódico
Title: Influence Of Ch4/h2 Reactive Ion Etching On The Deep Levels Of Si-doped Alxga1-xas (x=0.25)
Author: Pereira R.G.
Van Hove M.
De Potter M.
Van Rossum M.
Abstract: We study the passivation and recovery of shallow and deep levels in Si-doped AlGaAs exposed to CH4/H2 and H2 reactive ion etching (RIE). The carrier concentration depth profile is determined by capacitance-voltage measurements. The activation energy to recover the silicon donors is found to be 1.1 eV for samples exposed to CH4/H2 RIE and 1.3 eV for samples exposed to H2 RIE. We study the behavior of DX centers in Si-doped AlGaAs layers after RIE exposure and subsequent thermal annealing by using deep level transient spectroscopy. For CH4TH2 RIE a new emission is detected at the high temperature side. We identify this emission as the DX3 center, which is assigned to a DX center with three aluminum atoms surrounding the Si donor. This DX center is only detected on the samples exposed to CH4/H2 RIE. We explain the formation of this deep level to the highly selective removal of Ga atoms in favor of Al atoms. Consequently Al-rich regions are created near the surface. © 1996 American Vacuum Society.
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Rights: aberto
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Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0000414227&partnerID=40&md5=6d1d3c79ba72cc61fabf6b9e92e9848e
Date Issue: 1996
Appears in Collections:Unicamp - Artigos e Outros Documentos

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