Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/95539
Type: Artigo de periódico
Title: Dynamics Of The Hydrogen Oxidation And Silicon Dissolution Reactions In The Formation Of Porous Silicon
Author: Soares D.M.
Teschke O.
Dos Santos M.C.
Abstract: Porous silicon layers were grown in hydrofluoric acid solutions under constant anodic currents periodically interrupted during 100 ms every second. By monitoring the time dependent electrode potential, dynamic characteristics of the porous silicon formation were determined. Two reactions occur during the process: at the bottom of the pores the anodic silicon dissolution reaction proceeds and on the walls of the pores the hydrogen oxidation reaction takes place.
Editor: 
Rights: fechado
Identifier DOI: 
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-5244286128&partnerID=40&md5=ae9e58b85fbacac0471b5826b9d1f939
Date Issue: 1996
Appears in Collections:Unicamp - Artigos e Outros Documentos

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