Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/95535
Type: Artigo de evento
Title: Effect Of Plasma Conditions On Reactive Ion Etching Of Gaas In Cl2/ar
Author: Moshkalyov S.A.
Machida M.M.
Lebedev S.V.
Campos D.O.
Abstract: This report discusses results of a study of the parameters of plasma used for GaAs/Cl2 RIE. The parameters were studied using emission spectroscopy. The observed features of GaAs RIE are explained on the basis of a model including chemical and ion-stimulated components of the process.
Editor: IEEE, Piscataway, NJ, United States
Rights: fechado
Identifier DOI: 
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0029722115&partnerID=40&md5=526ab98645ae476ad7081f0930bdfb3e
Date Issue: 1996
Appears in Collections:Unicamp - Artigos e Outros Documentos

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