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|Type:||Artigo de periódico|
|Title:||Isolated Submicrometer Filaments Formed By Silicon Anodization In Hf Solutions|
|Abstract:||Porous silicon nanocolumn formation is the result of the merging of nearest-neighbor nanopores. In this paper we describe isolated submicrometer filaments formed by silicon anodization in HF solutions. The merging of nearest-neighbor pores may result in the formation of isolated submicrometer silicon filaments. The filament formation is explained by a model which takes into account filament wall layer passivation by hydrogen atoms. The formation of one isolated wire structure is a consequence of the pore diameter enlargement resulting from the available area decrease with etching time.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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