Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/95504
Type: Artigo de periódico
Title: Isolated Submicrometer Filaments Formed By Silicon Anodization In Hf Solutions
Author: Teschke O.
Scares D.M.
Abstract: Porous silicon nanocolumn formation is the result of the merging of nearest-neighbor nanopores. In this paper we describe isolated submicrometer filaments formed by silicon anodization in HF solutions. The merging of nearest-neighbor pores may result in the formation of isolated submicrometer silicon filaments. The filament formation is explained by a model which takes into account filament wall layer passivation by hydrogen atoms. The formation of one isolated wire structure is a consequence of the pore diameter enlargement resulting from the available area decrease with etching time.
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Rights: aberto
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Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0030149077&partnerID=40&md5=bf8f30c3523c682f8eea830f3d2f5bc9
Date Issue: 1996
Appears in Collections:Unicamp - Artigos e Outros Documentos

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