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|Type:||Artigo de evento|
|Title:||Time-resolved Photoluminescence In A-si1-xcx:h|
|Author:||Tessler Leandro R.|
Cirino Lucicleide R.
|Abstract:||The dependence of the photoluminescence (PL) decay on temperature and composition of a series of amorphous silicon-carbon alloys (a-Si1-xCx:H) with 0 <x <0.4 was studied. The samples were prepared by 'low power' PECVD from SiH4/CH4 gas mixtures. The decay curves are non-exponential and can be described as lifetime distributions (LTD). For pure a-Si:H at 17 K the peak of the LTD is of the order of 5×10-4 sec. It shifts to shorter lifetimes as x or the temperature increases. Samples with x > 0.3 present in addition a faster peak with maximum at 10-8 sec. The fast peak is almost temperature independent. The slow component shifts to shorter lifetimes as the temperature increases, and vanishes at room temperature. The presence of the fast peak is interpreted as due to a change in the radiative recombination mechanism. We associate this peak to the recombination of trapped 'excitons'.|
|Editor:||Materials Research Society, Pittsburgh, PA, United States|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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