Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/95462
Type: Artigo de periódico
Title: Linear-chain-model Interpretation Of Resonant Raman Scattering In Gensin Microstructures
Author: Araujo Silva M.A.
Ribeiro E.
Schulz P.A.
Cerdeira F.
Bean J.C.
Abstract: We use a linear-chain model with bond polarizabilities to simulate the Raman spectrum of a Ge5Si5 microstructure which presents interface roughness both in the atomic scale and in the form of terraces of lateral dimensions equal or superior to 102 Å. The model is not very successful in reproducing the effects of the short range roughness, but simulates effectively the consequences of terracing on the Raman spectrum of our sample. A detailed line shape analysis of one of these Raman lines leads to insights into the electronic states which are responsible for the resonant effects in the Raman cross section.
Editor: 
Rights: aberto
Identifier DOI: 
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0037896291&partnerID=40&md5=e3751090422498c0c2e68dc1149831b2
Date Issue: 1996
Appears in Collections:Unicamp - Artigos e Outros Documentos

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