Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/95439
Type: Artigo de periódico
Title: A-sixge1-x:h Thin Films
Author: Mulato M.
Chambouleyron I.
Abstract: In this work we study some optical and electronic properties of hydrogenated amorphous silicon-germanium alloys (a-SixGe1-x:H) deposited by co-sputtering. Thin films were deposited varying silicon concentration (estimated) from 0 up-to 10 at. %. The room temperature dark conductivity changes by more than one order of magnitude with increasing silicon content, while the changes in optical properties are less expressive. The main results concerning the thin film properties, as well as the main problems related to Schottky barriers (metal/semiconductor) performance are discussed.
Editor: 
Rights: fechado
Identifier DOI: 
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0030545045&partnerID=40&md5=4aa459e4861225873214c3fd70610601
Date Issue: 1996
Appears in Collections:Unicamp - Artigos e Outros Documentos

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