Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/95434
Type: Artigo de periódico
Title: Kinetic Roughening In Molecular Beam Epitaxy Of Inp
Author: Cotta M.A.
Hamm R.A.
Chu S.N.G.
Hull R.
Harriott L.R.
Temkin H.
Abstract: An abrupt transition in the growth mode is observed for epitaxial films of InP prepared by metalorganic molecular beam epitaxy. Below a minimum growth temperature, Tg min, three-dimensional growth and kinetically controlled roughening are observed, with surface roughness showing two distinc power law regimes dependent on film thickness. The observed roughening is attributed to the presence of a Schwoebel-Erlich-type barrier to adatom motion across surface steps. From the dependence of Tg min on the substrate misorientation, we are able to estimate an upper limit of 0.4-0.5 eV for this barrier. At temperatures higher than Tg min, we observe smooth morphologies with the concurrent formation of localized defects associated with P-vacancies. The density of defects is strongly dependent on the thermodynamic and kinetic growth parameters.
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Rights: fechado
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Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0030555913&partnerID=40&md5=4bd124ab427dfc6c0236dd60f6ef0add
Date Issue: 1996
Appears in Collections:Unicamp - Artigos e Outros Documentos

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