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|Type:||Artigo de periódico|
|Title:||Kinetic Roughening In Molecular Beam Epitaxy Of Inp|
|Abstract:||An abrupt transition in the growth mode is observed for epitaxial films of InP prepared by metalorganic molecular beam epitaxy. Below a minimum growth temperature, Tg min, three-dimensional growth and kinetically controlled roughening are observed, with surface roughness showing two distinc power law regimes dependent on film thickness. The observed roughening is attributed to the presence of a Schwoebel-Erlich-type barrier to adatom motion across surface steps. From the dependence of Tg min on the substrate misorientation, we are able to estimate an upper limit of 0.4-0.5 eV for this barrier. At temperatures higher than Tg min, we observe smooth morphologies with the concurrent formation of localized defects associated with P-vacancies. The density of defects is strongly dependent on the thermodynamic and kinetic growth parameters.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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