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|Type:||Artigo de periódico|
|Title:||Characterization Of Pbte Epitaxial Layers Grown On Baf2/caf2/si Structures|
|Abstract:||In this paper we present a characterization of PbTe epilayers grown by hot wall epitaxy on silicon using II-a fluorides as intermediate layers. The PbTe layers were characterized electrically by temperature dependent Hall effect measurements. A detailed study of the strain in CaF2 layers grown on Si(111) substrates was performed by high resolution x-ray diffraction analysis. To simulate the real operation conditions of the lead chalcogenides infrared devices, the CaF2/Si structure was submitted to thermal cycles from 300 to 77K and a ω scan was measured after each cycle.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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