Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/95432
Type: Artigo de periódico
Title: Characterization Of Pbte Epitaxial Layers Grown On Baf2/caf2/si Structures
Author: Boschetti C.
Abramof E.
Rappl P.H.O.
Bandeira I.N.
Motisuke P.
Hayashi M.A.
Cardoso L.P.
Abstract: In this paper we present a characterization of PbTe epilayers grown by hot wall epitaxy on silicon using II-a fluorides as intermediate layers. The PbTe layers were characterized electrically by temperature dependent Hall effect measurements. A detailed study of the strain in CaF2 layers grown on Si(111) substrates was performed by high resolution x-ray diffraction analysis. To simulate the real operation conditions of the lead chalcogenides infrared devices, the CaF2/Si structure was submitted to thermal cycles from 300 to 77K and a ω scan was measured after each cycle.
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Rights: fechado
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Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0030560335&partnerID=40&md5=2d2b9733fcb7d3268ef95e3f450c335f
Date Issue: 1996
Appears in Collections:Unicamp - Artigos e Outros Documentos

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