Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/95363
Type: Artigo de periódico
Title: Permittivity Of Amorphous Hydrogenated Carbon (a-c:h) Films As A Function Of Thermal Annealing
Author: Balachova O.V.
Swart J.W.
Braga E.S.
Cescato L.
Abstract: New metal-insulator-semiconductor structures with a composite insulating layer, consisting of an amorphous hydrogenated carbon (a-C:H) film and a silicon dioxide, were obtained on silicon substrates. Carbon films were deposited on SiO2 layer by radio-frequency plasma-enhanced chemical vapor deposition (rf PECVD) method from methane. The structures were annealed at the annealing temperature Ta = 250, 275, 300, and 350°C. C-V characteristics of the annealed and as-grown metal-amorphous carbon-oxide-semiconductor (MCOS) structures were examined at room temperature at a frequency of 1 MHz and compared with C-V characteristics of the classic metal-oxide-semiconductor (MOS) system. High-frequency C-V curves of both MCOS and MOS structures were used for extracting the permittivity εa-C:H of carbon films before and after thermal annealing. εa-C:H showed no variations with subsequent annealing of the structure up to Ta = 250°C, but it was observed to decrease from 5.6 to 2.8 as the film was annealed from 250°C up to 300°C with the most rapid changes occurring between 275 and 300°C. © 2001 Elsevier Science Ltd.
Editor: 
Rights: fechado
Identifier DOI: 10.1016/S0026-2692(01)00030-1
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0035426955&partnerID=40&md5=a8f963291bc44a386d6039ca6a20d7d4
Date Issue: 2001
Appears in Collections:Unicamp - Artigos e Outros Documentos

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