Please use this identifier to cite or link to this item:
|Type:||Artigo de evento|
|Title:||Electrical And Optical Effects Of He+ Ion Irradiation In Ingap/gaas/ingaas Lasers|
De Castro M.P.P.
Do Nascimento G.C.
|Abstract:||Effects of He+ ion irradiation in InGaP/GaAs multilayered laser structures with 7 nm InGaAs quantum wells (QWs) have been investigated. Two versions of the ion irradiation were performed: (I) into the complete structure, and (II) into the structure after a removing the p++-GaAs contact layer. In case I, two-energy He+ ion implantation includes a 20 keV irradiation for an isolation of p++-GaAs and a 170 keV irradiation for the isolation of the p-InGaP cladding layer. In case II, a one-energy (100 keV) implantation is used. Front-side photoluminescence studies show an appearance of the QW emission peak at 9260 Å in ion irradiated structures. This transparency effect was attributed to a reduction in a free-carrier absorption in the InGaP layers. © 2001 Elsevier Science B.V.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.