Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/95253
Type: Artigo de evento
Title: Electrical And Optical Effects Of He+ Ion Irradiation In Ingap/gaas/ingaas Lasers
Author: Danilov I.
Pataro L.L.
De Castro M.P.P.
Do Nascimento G.C.
Frateschi N.C.
Abstract: Effects of He+ ion irradiation in InGaP/GaAs multilayered laser structures with 7 nm InGaAs quantum wells (QWs) have been investigated. Two versions of the ion irradiation were performed: (I) into the complete structure, and (II) into the structure after a removing the p++-GaAs contact layer. In case I, two-energy He+ ion implantation includes a 20 keV irradiation for an isolation of p++-GaAs and a 170 keV irradiation for the isolation of the p-InGaP cladding layer. In case II, a one-energy (100 keV) implantation is used. Front-side photoluminescence studies show an appearance of the QW emission peak at 9260 Å in ion irradiated structures. This transparency effect was attributed to a reduction in a free-carrier absorption in the InGaP layers. © 2001 Elsevier Science B.V.
Editor: 
Rights: fechado
Identifier DOI: 10.1016/S0168-583X(00)00573-5
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0035302932&partnerID=40&md5=229d7043dfe60a28f25f56e7715546e7
Date Issue: 2001
Appears in Collections:Unicamp - Artigos e Outros Documentos

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