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|Type:||Artigo de periódico|
|Title:||Fractional-dimensional Space Approach To The Study Of Shallow-donor States In Symmetric-coupled Gaas-ga1-xalxas Multiple Quantum Wells|
De Dios-Leyva M.
|Abstract:||The fractional-dimensional space approach is extended to study shallow-donor states in symmetric-coupled GaAs-Ga1-xAlxAs multiple quantum wells. In this scheme, the real anisotropic `shallow donor+multiple quantum well' semiconductor system is mapped, for each shallow-donor state, into an effective fractional-dimensional isotropic environment, and the fractional dimension is essentially related to the anisotropy of the actual semiconductor system. Calculations within the fractional-dimensional space scheme were performed for the binding energies of 1s-like shallow-donor states in various positions in symmetric-coupled double and triple GaAs-Ga1-xAlxAs semiconductor quantum wells, and for varying well and barrier thicknesses. Fractional-dimensional theoretical results are shown to be in good agreement with previous variational theoretical calculations.|
|Editor:||Elsevier Science Publishers B.V., Amsterdam, Netherlands|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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