Please use this identifier to cite or link to this item:
Type: Artigo de periódico
Title: Fractional-dimensional Space Approach To The Study Of Shallow-donor States In Symmetric-coupled Gaas-ga1-xalxas Multiple Quantum Wells
Author: Matos-Abiague A.
Oliveira L.E.
De Dios-Leyva M.
Abstract: The fractional-dimensional space approach is extended to study shallow-donor states in symmetric-coupled GaAs-Ga1-xAlxAs multiple quantum wells. In this scheme, the real anisotropic `shallow donor+multiple quantum well' semiconductor system is mapped, for each shallow-donor state, into an effective fractional-dimensional isotropic environment, and the fractional dimension is essentially related to the anisotropy of the actual semiconductor system. Calculations within the fractional-dimensional space scheme were performed for the binding energies of 1s-like shallow-donor states in various positions in symmetric-coupled double and triple GaAs-Ga1-xAlxAs semiconductor quantum wells, and for varying well and barrier thicknesses. Fractional-dimensional theoretical results are shown to be in good agreement with previous variational theoretical calculations.
Editor: Elsevier Science Publishers B.V., Amsterdam, Netherlands
Rights: fechado
Identifier DOI: 10.1016/S0921-4526(00)00577-9
Date Issue: 2001
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File Description SizeFormat 
2-s2.0-0035056204.pdf224 kBAdobe PDFView/Open

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.