Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/95109
Type: Artigo
Title: Segregation of dopant atoms on extended defects in semiconductors
Author: Justo, J. F.
Schmidt, T. M.
Fazzio, A.
Antonelli, A.
Abstract: We performed a theoretical investigation on the interaction of dopant atoms with extended defects in semiconductors using ab initio total energy calculations. Dopant atoms (donors and acceptors) were found to segregate in stacking faults in silicon and in gallium arsenide, with segregation energies as large as 0.2 eV. A general trend on the electronic properties of segregated dopants in stacking faults is that the donor (or acceptor) electronic energy levels become deeper in the electronic gap, as compared to those levels for the defect in a crystalline site. © 2001 Elsevier Science B.V.
We performed a theoretical investigation on the interaction of dopant atoms with extended defects in semiconductors using ab initio total energy calculations.Dopant atoms (donors and acceptors) were found to segregate in stacking faults in silicon and in gallium arsenide, with segregation energies as large as 0.2 eV. A general trend on the electronic properties of segregated dopants in stacking faults is that the donor (or acceptor) electronic energy levels become deeper in the electronic gap, as compared to those levels for the defect in a crystalline site.
Subject: Cristais - Defeitos
Deslocamentos em cristais
Silício
Defeitos pontuais
Falhas de empilhamento
Country: Holanda
Editor: Elsevier
Citation: Physica B: Condensed Matter. , v. 302-303, n. , p. 403 - 407, 2001.
Rights: fechado
Identifier DOI: 10.1016/S0921-4526(01)00462-8
Address: https://www.sciencedirect.com/science/article/pii/S0921452601004628
Date Issue: 2001
Appears in Collections:IFGW - Artigos e Outros Documentos

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