Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/95106
Type: Artigo
Title: Dopant interaction with a dislocation in silicon: local and non-local effects
Author: Antonelli, Alex
Justo, Joao F.
Fazzio, A.
Abstract: We performed a theoretical investigation on the interaction of arsenic impurities with a 30° glide partial dislocation in silicon. Our calculations were performed by ab initio total energy methods, based on the density functional theory and the local density approximation. We find that an arsenic atom, in a crystalline position, gives away one electron to the dislocation, becoming positively charged while the dislocation core is negatively charged. The interaction between arsenic and the core is essentially electrostatic, which leads to arsenic segregation. © 2001 Elsevier Science B.V. All rights reserved.
We performed a theoretical investigation on the interaction of arsenic impurities with a 301 glide partial dislocation in silicon. Our calculations were performed by ab initio total energy methods, based on the density functional theory and the local density approximation. We find that an arsenic atom, in a crystalline position, gives away one electron to the dislocation, becoming positively charged while the dislocation core is negatively charged. The interaction between arsenic and the core is essentially electrostatic, which leads to arsenic segregation.
Subject: Cristais – Defeitos
Deslocamentos em cristais
Arsênio
Silício
Falhas de empilhamento
Country: Holanda
Editor: Elsevier
Citation: Physica B: Condensed Matter. , v. 308-310, n. , p. 470 - 473, 2001.
Rights: fechado
Identifier DOI: 10.1016/S0921-4526(01)00743-8
Address: https://www.sciencedirect.com/science/article/pii/S0921452601007438
Date Issue: 2001
Appears in Collections:IFGW - Artigos e Outros Documentos

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