Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/94954
Type: Artigo de periódico
Title: Strain-dependent Optical Emission In In1 - Xgaxas/inp Quantum Wells
Author: Tudury H.A.P.
Nakaema M.K.K.
Iikawa F.
Brum J.A.
Ribeiro E.
Carvalho W. Jr.
Bernussi A.A.
Gobbi A.L.
Abstract: InGaAs/InP strained-layer modulation -doped quantum wells were studied by photoluminescence. The combination of the built-in strain and the quantum confinement in this system leads to a strong valence band mixing yielding direct and indirect band gap structures. We demonstrate that the optical emission line shape is strongly dependent on the valence band dispersion and it is a good method to distinguish between direct and indirect structures. The application of an external biaxial tensile strain to the samples provides an additional evidence of direct-to-indirect band gap transition in strained heterostructures.
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Rights: aberto
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Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-2342560298&partnerID=40&md5=72bef7ec62a391b5962fbc3dc7c970fd
Date Issue: 2001
Appears in Collections:Unicamp - Artigos e Outros Documentos

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