Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/94857
Type: Artigo de evento
Title: Electron Emission Enhanced Chemical Vapor Deposition (eeecvd) For The Fabrication Of Diverse Silicon-containing Films
Author: Bica de Moraes M.A.
Durrant S.F.
Rouxinol F.P.
Abstract: Amorphous films (a-C:H:Si and a-C:H:Si:O) were grown in a vacuum chamber containing a hot filament on substrates held on a copper plate to which a bias voltage could be applied. This modified hot-filament chemical vapor deposition process was used to fabricate various types of amorphous thin film from mixtures of tetramethylsilane (TMS) or hexamethyldisiloxane (HMDSO) diluted in argon or argon/nitrogen mixtures. Electrical characteristics of the process, deposition rates, and film structures were investigated as a function of the deposition parameters, particularly the proportion of nitrogen in the chamber feed. For film characterization, transmission infrared spectroscopy (IRS) was employed. Without a significant substrate current, deposition rates were negligible. Thus, electron impact fragmentation of the monomer molecules is a key process in film deposition using this technique. The method shows promise and versatility for the fabrication of a wide range of amorphous films, including, for example, a-C:H and a-C:H:O. © 2001 Elsevier Science B.V. All rights reserved.
Editor: 
Rights: fechado
Identifier DOI: 10.1016/S0040-6090(01)01324-4
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-18344402227&partnerID=40&md5=5b162800078051d6de9f3e5692ab6d22
Date Issue: 2001
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File Description SizeFormat 
2-s2.0-18344402227.pdf147.22 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.