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|Type:||Artigo de evento|
|Title:||Sixge1-x Films And Heterojunctions Produced By Epitaxial Crystallization Of A-sixge1-x Alloys On Gaas|
|Abstract:||We studied the structural and electrical properties of crystallized a-SixGe1-x alloys with 0≤x≤1 on (100) GaAs substrates. Raman spectroscopy on laser crystallized films shows the Si-Si, Ge-Ge, and Si-Ge vibrations characteristic of crystalline SixGe 1-x alloys. The Raman polarization selection rules indicate that, while SixGe1-x films with x up to 25% are epitaxial, those with higher Si concentrations are polycrystalline with oriented grains. Heterojunctions formed by crystallizing a-Ge films on p-type GaAs exhibit Ohmic behavior. Ge/n-GaAs heterojunctions, in contrast, show rectification with current versus voltage characteristics compatible with the behavior of n-n structures. These heterojunctions are sensitive to light with wavelengths up to 1600 nm, thus demonstrating that they can be used as detectors in the spectral range for optical communications (1300-1550 nm). © 2004 Elsevier B.V. All rights reserved.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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