Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/94809
Type: Artigo de evento
Title: Sixge1-x Films And Heterojunctions Produced By Epitaxial Crystallization Of A-sixge1-x Alloys On Gaas
Author: Dondeo F.
Santos P.V.
Kostial H.
Krispin P.
Pudenzi M.A.A.
Chambouleyron I.
Abstract: We studied the structural and electrical properties of crystallized a-SixGe1-x alloys with 0≤x≤1 on (100) GaAs substrates. Raman spectroscopy on laser crystallized films shows the Si-Si, Ge-Ge, and Si-Ge vibrations characteristic of crystalline SixGe 1-x alloys. The Raman polarization selection rules indicate that, while SixGe1-x films with x up to 25% are epitaxial, those with higher Si concentrations are polycrystalline with oriented grains. Heterojunctions formed by crystallizing a-Ge films on p-type GaAs exhibit Ohmic behavior. Ge/n-GaAs heterojunctions, in contrast, show rectification with current versus voltage characteristics compatible with the behavior of n-n structures. These heterojunctions are sensitive to light with wavelengths up to 1600 nm, thus demonstrating that they can be used as detectors in the spectral range for optical communications (1300-1550 nm). © 2004 Elsevier B.V. All rights reserved.
Editor: 
Rights: fechado
Identifier DOI: 10.1016/j.jnoncrysol.2004.02.052
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-2942555271&partnerID=40&md5=c0040aa79f0c025c2fb66666cab89131
Date Issue: 2004
Appears in Collections:Unicamp - Artigos e Outros Documentos

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