Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/94801
Type: Artigo de evento
Title: Selective Etching Of Polycrystalline Silicon In A Hexode Type Plasma Etcher
Author: Vieira R.
Martarello V.
Moshkalyov S.A.
Diniz J.A.
Swart J.W.
Abstract: Plasma etching is a powerful tool for production of anisotropic structures with sub-micron/nano critical dimensions. Besides the anisotropy, another important requirement for a high quality etching process in Poly-silicon gate etching is its selectivity over thin underlying SiO2 layer. This paper reports our first results obtained in etching of polycrystalline silicon with semi-industrial hexode etcher. High poly-siIicon/SiO2 etch selectivity is obtained. The end-point of process is successfully detected using the laser interferometry technique.
Editor: 
Rights: fechado
Identifier DOI: 
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-17044402585&partnerID=40&md5=85482538ba6c31bc9503cab2bec2a044
Date Issue: 2004
Appears in Collections:Unicamp - Artigos e Outros Documentos

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