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|Type:||Artigo de evento|
|Title:||Reactive Ion Etching Of Sige Using Halogen-based Plasmas|
|Abstract:||The results of a comparative study of reactive ion etching of silicon-germanium, monocrystalline silicon, and silicon nitride in several halogen-based plasmas (SF6, CF4, CHF3 and CCl2F2) are presented. Etch rates of the materials were analyzed as a function of the RF power. The main objetive of this work is to obtain a high selectivity of silicon-germanium over silicon nitride, an important requirement in the fabrication of infrared radiation detectors. High selectivities of approximately 100 were achieved with CHF3 gas.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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