Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/94782
Type: Artigo de evento
Title: Reactive Ion Etching Of Sige Using Halogen-based Plasmas
Author: Reyes-Betanzo C.
Moshkalyov S.A.
Abstract: The results of a comparative study of reactive ion etching of silicon-germanium, monocrystalline silicon, and silicon nitride in several halogen-based plasmas (SF6, CF4, CHF3 and CCl2F2) are presented. Etch rates of the materials were analyzed as a function of the RF power. The main objetive of this work is to obtain a high selectivity of silicon-germanium over silicon nitride, an important requirement in the fabrication of infrared radiation detectors. High selectivities of approximately 100 were achieved with CHF3 gas.
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Rights: fechado
Identifier DOI: 
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-17044366194&partnerID=40&md5=a582f0c28d5d15e190ed9f5ba2a85495
Date Issue: 2004
Appears in Collections:Unicamp - Artigos e Outros Documentos

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