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|Type:||Artigo de evento|
|Title:||Formation Of Nickel Silicides Onto As-doped Silicon Using A Thin Pt/pd Interlayer|
Dos Santos Filho S.G.
|Abstract:||Thermal stability of nickel suicide was reached using a thin Pt (1.5nm)/Pd (3.0 nm) interlayer between As-doped silicon and nickel (30 nm). A shallow contact structure was fabricated and characterized using Ni (Pt/Pd) suicides formed at temperature ranging from 350 to 800 °C for 120s. The Ni (Pt/Pd) suicide films were characterized by Rutherford Backscattering (RBS) spectrometry, X-Ray Diffraction (XRD) analysis, Atomic Force Microscopy (AFM) and four probe measurements. From these techniques, crystallographic phases (XRD), surface and interface micro-roughness (AFM) and, suicide stoichiometry and thickness by using RUMP simulations of the RBS spectra were obtained. The nickel suicide structure resulted a mixture of several phases (Ni 2Si, NiSi 2, Ni 3Si or Ni 31Si 12) with an average stoichiometry NiSi for rapid thermal annealing at 600 °C for 120 s. Also, this processing led to suicide with low interface RMS roughness (<0.7nm) and low resistivity (25.7 μΩ.cm). I-V curves were extracted from silicided n+p diodes, resulting in low reverse current density of 220 nA/cm 2 and ideality factor of 1.3.|
|Citation:||Proceedings - Electrochemical Society. , v. 3, n. , p. 357 - 362, 2004.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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