Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/94781
Type: Artigo de evento
Title: Formation Of Nickel Silicides Onto As-doped Silicon Using A Thin Pt/pd Interlayer
Author: Reis R.W.
Dos Santos Filho S.G.
Doi I.
Swart J.W.
Abstract: Thermal stability of nickel suicide was reached using a thin Pt (1.5nm)/Pd (3.0 nm) interlayer between As-doped silicon and nickel (30 nm). A shallow contact structure was fabricated and characterized using Ni (Pt/Pd) suicides formed at temperature ranging from 350 to 800 °C for 120s. The Ni (Pt/Pd) suicide films were characterized by Rutherford Backscattering (RBS) spectrometry, X-Ray Diffraction (XRD) analysis, Atomic Force Microscopy (AFM) and four probe measurements. From these techniques, crystallographic phases (XRD), surface and interface micro-roughness (AFM) and, suicide stoichiometry and thickness by using RUMP simulations of the RBS spectra were obtained. The nickel suicide structure resulted a mixture of several phases (Ni 2Si, NiSi 2, Ni 3Si or Ni 31Si 12) with an average stoichiometry NiSi for rapid thermal annealing at 600 °C for 120 s. Also, this processing led to suicide with low interface RMS roughness (<0.7nm) and low resistivity (25.7 μΩ.cm). I-V curves were extracted from silicided n+p diodes, resulting in low reverse current density of 220 nA/cm 2 and ideality factor of 1.3.
Editor: 
Rights: fechado
Identifier DOI: 
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-17044387765&partnerID=40&md5=f82c4777fe1bad657ce8b51befae85d6
Date Issue: 2004
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
There are no files associated with this item.


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.