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|Type:||Artigo de evento|
|Title:||High Sensitivity Obtained By Three-color Detector Aps-cmos Using Antireflective Coating|
|Abstract:||In this work we report the results of the fabrication and simulation of antireflective coating (ARC) of SiO2 deposited on a silicon substrate, to various thickness. We found that for a thickness of 100nm of SiO2 ARC we have high transmittance on a broad spectral range 500-1000nm. We also obtained maximum transmittance in the three basic colors for the thickness value of 70nm, with values that oscillate between 80 e 85 %. However the values are almost punctual and are in small spectral range of +/- 30nm. The film thickness between 100 and 420 nm were found by ellipsometry by using a fixed refractive index of 1.46. The ARCs were obtained from the plasma source of the Electron Cyclotron Resonance-Chemical Vapor Deposition (ECR-CVD), at room temperature. Spectroscopic properties of SiO2 films, studied through Fourier transform infrared spectroscopy (FTIR), revealed a high structural quality and the presence of Si-O bonds.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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