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|Type:||Artigo de evento|
|Title:||Ultra-thin Silicon Oxynitride Gate-dielectric Made By Ecr Plasmas|
|Abstract:||Silicon oxynitride (SiOxNy) insulators have been grown at room temperature (20°C), low pressures (5, 10, 20 and 50 mTorr) and 1000 W microwave power electron cyclotron resonance (ECR) plasma on Si substrates. Fourier transform infra-red (PTIR) spectrometry analyses reveal the presence of Si-O bonds in the silicon oxynitride films. For stoichiometric silicon oxide, Si-O bond peak position value of 1080 cm-1 is identified. For values < 1080 cm-1, the oxynitrides are nitrogen rich. Si-O bond peak position shifts (in relation to the process pressure) between 1053 and 1076 cm-1, indicating that the oxynitrides made by medium pressures, between 10 and 20 mTorr, presented less nitrogen than those made by 5 and 50 mTorr. The C-V characteristics of Al/Ti/SiOxN y/Si specimens were obtained and the equivalent oxide thickness (EOT) values were determined, with values between 0.56 and 2 nm. The EOT values increase with pressure, and the nitrogen concentration in the films and the EOT values can be controlled by process pressure.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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