Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/94746
Type: Artigo de evento
Title: Ultra-thin Silicon Oxynitride Gate-dielectric Made By Ecr Plasmas
Author: Manera G.A.
Diniz J.A.
Doi I.
Swart J.W.
Abstract: Silicon oxynitride (SiOxNy) insulators have been grown at room temperature (20°C), low pressures (5, 10, 20 and 50 mTorr) and 1000 W microwave power electron cyclotron resonance (ECR) plasma on Si substrates. Fourier transform infra-red (PTIR) spectrometry analyses reveal the presence of Si-O bonds in the silicon oxynitride films. For stoichiometric silicon oxide, Si-O bond peak position value of 1080 cm-1 is identified. For values < 1080 cm-1, the oxynitrides are nitrogen rich. Si-O bond peak position shifts (in relation to the process pressure) between 1053 and 1076 cm-1, indicating that the oxynitrides made by medium pressures, between 10 and 20 mTorr, presented less nitrogen than those made by 5 and 50 mTorr. The C-V characteristics of Al/Ti/SiOxN y/Si specimens were obtained and the equivalent oxide thickness (EOT) values were determined, with values between 0.56 and 2 nm. The EOT values increase with pressure, and the nitrogen concentration in the films and the EOT values can be controlled by process pressure.
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Rights: fechado
Identifier DOI: 
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-5744254394&partnerID=40&md5=5e02cff42361ba2c9ba397ddae93ac4e
Date Issue: 2004
Appears in Collections:Unicamp - Artigos e Outros Documentos

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