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|Type:||Artigo de evento|
|Title:||Deep Dry Etching Of Silicon Using Bosch Type Process|
|Abstract:||Deep reactive ion etching of silicon using cyclic repetition of etching and passivation steps (known as the Bosch process) in high density plasma sources is widely used in micromachining. In this study, a similar process was developed employing a conventional low density capacitively coupled plasma reactor. SF6 and CHF3 were used as etch and polymer deposition gases, respectively. The processes of etching and wall passivation were controlled by the gas pressure and radio-frequency (RF) power, with the cicle time being fixed.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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