Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/94745
Type: Artigo de evento
Title: Deep Dry Etching Of Silicon Using Bosch Type Process
Author: Guidini V.O.
Moshkalyov S.A.
Tatsch P.J.
Abstract: Deep reactive ion etching of silicon using cyclic repetition of etching and passivation steps (known as the Bosch process) in high density plasma sources is widely used in micromachining. In this study, a similar process was developed employing a conventional low density capacitively coupled plasma reactor. SF6 and CHF3 were used as etch and polymer deposition gases, respectively. The processes of etching and wall passivation were controlled by the gas pressure and radio-frequency (RF) power, with the cicle time being fixed.
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Rights: fechado
Identifier DOI: 
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-17044416874&partnerID=40&md5=819913a410d204b4555701e427f2faad
Date Issue: 2004
Appears in Collections:Unicamp - Artigos e Outros Documentos

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