Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/94744
Type: Artigo de evento
Title: Micro-electromechanical Simulation Of A Cmos Pressure Sensor
Author: Fruett F.
Garcia V.
Pavanello R.
Abstract: This paper presents micro-electromechanical simulation of a pressure sensor totally compatible with CMOS process. A finite element modeling of a silicon membrane was performed to evaluate the mechanical-stress distribution on the membrane surface. The results obtained with the Finite Element Method (FEM) were used in an electronic circuit simulator to evaluate a new type of differential amplifier, which is designed to maximize the mechanical-stress effect in MOS transistors. This stress-sensitive differential amplifier, which converts applied pressure to voltage signal, is very suited for applications where low-power and miniaturized systems are desirable. Simulation shows that sensitivity of 11mV/psi can be obtained.
Editor: 
Rights: fechado
Identifier DOI: 
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-17044419217&partnerID=40&md5=f5a297d24ab58ab13771d63edcaee8e6
Date Issue: 2004
Appears in Collections:Unicamp - Artigos e Outros Documentos

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