Please use this identifier to cite or link to this item:
|Type:||Artigo de evento|
|Title:||Micro-electromechanical Simulation Of A Cmos Pressure Sensor|
|Abstract:||This paper presents micro-electromechanical simulation of a pressure sensor totally compatible with CMOS process. A finite element modeling of a silicon membrane was performed to evaluate the mechanical-stress distribution on the membrane surface. The results obtained with the Finite Element Method (FEM) were used in an electronic circuit simulator to evaluate a new type of differential amplifier, which is designed to maximize the mechanical-stress effect in MOS transistors. This stress-sensitive differential amplifier, which converts applied pressure to voltage signal, is very suited for applications where low-power and miniaturized systems are desirable. Simulation shows that sensitivity of 11mV/psi can be obtained.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.