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Type: Artigo de evento
Title: Ingaalas Multi-quantum- Well Electro-absorption Modulators For 10gb/s Uncooled Operation In The C-band
Author: Frateschi N.C.
Zhang J.
Choi W.J.
Gebretsadik H.
Jambunathan R.
Bond A.E.
Abstract: InGaAlAs multi-quantum well (MQW) structures for the integration of semiconductor optical amplifiers (SOA) and Quantum Confined Stark Effect (QCSE) electro-absorption modulators (EAM) are demonstrated. Robust performance over a large temperature range is shown in hybrid modules integrating these devices and DFB lasers. Modulated output power in excess of 0 dBm, 1.7 dB maximum change in extinction ratio, and dispersion penalty of 1 dB for 1600 ps/nm propagation are demonstrated in a range of temperature operation over 80°C.
Rights: fechado
Identifier DOI: 
Date Issue: 2004
Appears in Collections:Unicamp - Artigos e Outros Documentos

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