Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/94743
Type: Artigo de evento
Title: Ingaalas Multi-quantum- Well Electro-absorption Modulators For 10gb/s Uncooled Operation In The C-band
Author: Frateschi N.C.
Zhang J.
Choi W.J.
Gebretsadik H.
Jambunathan R.
Bond A.E.
Abstract: InGaAlAs multi-quantum well (MQW) structures for the integration of semiconductor optical amplifiers (SOA) and Quantum Confined Stark Effect (QCSE) electro-absorption modulators (EAM) are demonstrated. Robust performance over a large temperature range is shown in hybrid modules integrating these devices and DFB lasers. Modulated output power in excess of 0 dBm, 1.7 dB maximum change in extinction ratio, and dispersion penalty of 1 dB for 1600 ps/nm propagation are demonstrated in a range of temperature operation over 80°C.
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Rights: fechado
Identifier DOI: 
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-17044362283&partnerID=40&md5=6404003c678dcb9ea8a7fa9ba5932b58
Date Issue: 2004
Appears in Collections:Unicamp - Artigos e Outros Documentos

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