Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/94600
Type: Artigo de evento
Title: 1.54 μm Luminescence Quenching Of Erbium-doped Hydrogeated Amorphous Silicon Deposited By D.c. Magnetron Sputtering
Author: Kechouane M.
Biggemen D.
Tessler L.R.
Abstract: Erbium was doped onto hydrogenated amorphous silicon using the D.C. magnetron sputtering technique. After annealing under oxygen atmosphere at 350°C, a-Si : H〈Er〉 films with variable optical gaps exhibits efficient room temperature at 1.538 μm. The intensities of the 1538 and 1549.6 nm Er3+ lines at room temperature were 15 and 12%, respectively, of those at 15K. This result suggests that DC sputtered a-Si:H is a suitable host for efficient Er3+ emission at room temperature. Amorphous silicon has an erbium solubility higher than 1020 cm -3 and a greatly reduced thermal quenching of the erbium PL due to a less efficient excitation energy transfer. The observation of efficient room temperature luminescence from erbium-doped a-Si:H films involves impurities such as oxygen. We found that the increase in the optical gap and the electrical resistivity of the a-Si: H〈Er〉 films produced at low substrate temperature (high defect density, low gap) is more important than that in material deposited at 240°C. © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Editor: 
Rights: fechado
Identifier DOI: 10.1002/pssc.200303958
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-2342638335&partnerID=40&md5=bdc6e943b181a2577dca8598ac239050
Date Issue: 2004
Appears in Collections:Unicamp - Artigos e Outros Documentos

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