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|Type:||Artigo de evento|
|Title:||1.54 μm Luminescence Quenching Of Erbium-doped Hydrogeated Amorphous Silicon Deposited By D.c. Magnetron Sputtering|
|Abstract:||Erbium was doped onto hydrogenated amorphous silicon using the D.C. magnetron sputtering technique. After annealing under oxygen atmosphere at 350°C, a-Si : H〈Er〉 films with variable optical gaps exhibits efficient room temperature at 1.538 μm. The intensities of the 1538 and 1549.6 nm Er3+ lines at room temperature were 15 and 12%, respectively, of those at 15K. This result suggests that DC sputtered a-Si:H is a suitable host for efficient Er3+ emission at room temperature. Amorphous silicon has an erbium solubility higher than 1020 cm -3 and a greatly reduced thermal quenching of the erbium PL due to a less efficient excitation energy transfer. The observation of efficient room temperature luminescence from erbium-doped a-Si:H films involves impurities such as oxygen. We found that the increase in the optical gap and the electrical resistivity of the a-Si: H〈Er〉 films produced at low substrate temperature (high defect density, low gap) is more important than that in material deposited at 240°C. © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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