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|Type:||Artigo de periódico|
|Title:||Ferromagnetic Tunneling Junctions At Low Voltages: Elastic Versus Inelastic Scattering At T=0°k|
|Abstract:||The different contributions to the magnetoresistance (MR) of magnetic tunneling junctions at low voltages were discussed. The approach included lowering of the effective barrier height with the applied voltage, magnon assisted inelastic tunneling near zero bias and different variations of the density of states for each spin band with voltage. The role of the different parameters used in the theory was also discussed. Some of them determined the absolute value of the resistance at zero bias and a different set, related to the band structure which monitors the global behavior with voltage and the value of the junction magnetoresistance (MR).|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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