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|Type:||Artigo de periódico|
|Title:||Micro-raman Stress Characterization Of Polycrystalline Silicon Films Grown At High Temperature|
|Abstract:||In this paper the residual stress of polycrystalline silicon (poly-Si) grown at high temperature in a vertical LPCVD reactor has been studied using micro-Raman spectroscopy. The samples were prepared on Si(1 0 0) n-type substrates coated with 100 nm of SiO2. The films were deposited in the temperature range of 750-900°C at pressures of 5 and 10 Torr. The as-deposited poly-Si films are highly crystalline and show tensile stress. Micro-Raman measurements show that the residual stress is reduced as the deposition temperature is increased and, above 800°C, tensile stress is reduced to less than 150 MPa. These results indicate that high quality, high crystalline and low strained poly-Si films can be obtained in this type of reactor using higher deposition temperature. © 2004 Elsevier B.V. All rights reserved.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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