Please use this identifier to cite or link to this item:
Type: Artigo de periódico
Title: Micro-raman Stress Characterization Of Polycrystalline Silicon Films Grown At High Temperature
Author: Teixeira R.C.
Doi I.
Zakia M.B.P.
Diniz J.A.
Swart J.W.
Abstract: In this paper the residual stress of polycrystalline silicon (poly-Si) grown at high temperature in a vertical LPCVD reactor has been studied using micro-Raman spectroscopy. The samples were prepared on Si(1 0 0) n-type substrates coated with 100 nm of SiO2. The films were deposited in the temperature range of 750-900°C at pressures of 5 and 10 Torr. The as-deposited poly-Si films are highly crystalline and show tensile stress. Micro-Raman measurements show that the residual stress is reduced as the deposition temperature is increased and, above 800°C, tensile stress is reduced to less than 150 MPa. These results indicate that high quality, high crystalline and low strained poly-Si films can be obtained in this type of reactor using higher deposition temperature. © 2004 Elsevier B.V. All rights reserved.
Rights: fechado
Identifier DOI: 10.1016/j.mseb.2004.05.025
Date Issue: 2004
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File Description SizeFormat 
2-s2.0-4344561556.pdf126.55 kBAdobe PDFView/Open

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.