Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/94355
Type: Artigo de evento
Title: Mechanisms Of Silicon Nitride Etching By Electron Cyclotron Resonance Plasmas Using Sf6- And Nf3-based Gas Mixtures
Author: Reyes-Betanzo C.
Moshkalyov S.A.
Ramos A.C.S.
Swart J.W.
Abstract: The results of a comparitive study of SiNx, SiO2 and Si etching in SF6 - and NF3 --based gas mixtures were presented using a high-density electron cyclotron resonance (ECR) plasma. It was shown that higher selectivities of SiNx etching over SiO2 (up to ∼100) were achieved with NF3, while higher selectivities over Si were obtained with SF6-based mixtures. The plasma and surface processes responsible for etching were analyzed. The mechanisms of nitride etching in NF3-based plasmas were also proposed.
Editor: 
Rights: aberto
Identifier DOI: 10.1116/1.1701858
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-4344582265&partnerID=40&md5=2645aa802aafa0f956493a00b1be3666
Date Issue: 2004
Appears in Collections:Unicamp - Artigos e Outros Documentos

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