Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/94288
Type: Artigo de periódico
Title: Magnetotransport And Electric Properties Of Co-sio2-si Structure
Author: De Carvalho H.B.
Brasil M.J.S.P.
Knobel M.
Denardin J.C.
Abstract: We present an investigation on the transport and magnetotransport properties of thin Co films deposited onto Si substrates with a thin native oxide layer. We observed a marked transition on the transport properties of our films at ∼250 K. Around this temperature the conduction changes from electronic to hole-like and the resistance undergoes a clear drop. This effect can be explained by a conduction channel switching from the upper metallic film to the Si hole inversion layer as we increase the sample temperature. We show that this channel switching may be controlled by applying an external bias to the structure. © 2003 Elsevier B.V. All rights reserved.
Editor: 
Rights: fechado
Identifier DOI: 10.1016/j.jmmm.2003.12.762
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-2642557306&partnerID=40&md5=3c9e90a5746fdd863ec465a7d016bb34
Date Issue: 2004
Appears in Collections:Unicamp - Artigos e Outros Documentos

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