Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/94098
Type: Artigo de periódico
Title: Pd Growth On Cu(1 1 1): Stress Relaxation Through Surface Alloying?
Author: Paniago R.
De Siervo A.
Soares E.A.
Pfannes H.-D.
Landers R.
Abstract: On the basis of a high-precision reflection high-energy electron diffraction (RHEED) investigation details of the growth of Pd on a Cu(1 1 1) single crystal substrate at room temperature are reported. Because of the +7.6% misfit of the Pd lattice spacing as compared to Cu, perfect pseudomorphous growth would result in highly stressed ultra-thin films. RHEED analysis shows that as a function of Pd coverage initially the film starts to grow with the in-plane Cu(1 1 1) lattice parameter. With increasing coverage the lattice parameter rapidly changes to the "natural" lateral lattice parameter of Pd(1 1 1). We propose that a progressive increase of the equilibrium lateral lattice parameter by alloying (Vegards law) releases the stress in the Pd/Cu(1 1 1) system. With a coverage of n>2 ML (n = number of monolayers, ML) pure Pd layers are formed, since the in-plane lattice parameter equals the expected value for Pd at n = 2 ML. Our conclusion that Pd-Cu surface alloying acts as a relaxation mechanism in this quasi-pseudomorphous growth system, corroborates scanning tunneling microscopy [Surf. Sci. 408 (1998) 43] which also suggests formation of a random surface alloy in the earlier stages of Pd growth on Cu(1 1 1). © 2004 Elsevier B.V. All rights reserved.
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Rights: fechado
Identifier DOI: 10.1016/j.susc.2004.05.047
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-2942668397&partnerID=40&md5=0196ee4cd08b4076881c158343e1364c
Date Issue: 2004
Appears in Collections:Unicamp - Artigos e Outros Documentos

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