Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/94040
Type: Artigo de evento
Title: Near Band-edge Optical Properties Of Cubic Gan With And Without Carbon Doping
Author: Fernandez J.R.L.
Cerdeira F.
Meneses E.A.
Soares J.A.N.T.
Noriega O.C.
Leite J.R.
As D.J.
Kohler U.
Salazar D.G.P.
Schikora D.
Lischka K.
Abstract: We report the results of studying the optical properties of cubic GaN thin films with photoluminescence and photoluminescence excitation spectroscopies. The films are deposited by plasma-assisted molecular beam epitaxy on GaAs (001) substrates, with and without intentional doping with carbon atoms (p-type doping). The evolution of the optical spectra of the C-doped samples is consistent with a picture in which carbon enters into N-vacancies at low concentrations, producing a marked improvement in the crystalline properties of the material. At higher concentrations it begins to form complexes, possibly due to interstitial occupation. The temperature dependence on the absorption edge of the doped material is also measured and is analyzed with standard theoretical models. © 2004 Elsevier Ltd. All rights reserved.
Editor: 
Rights: fechado
Identifier DOI: 10.1016/S0026-2692(03)00226-X
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0242691811&partnerID=40&md5=8ad6ff28156794c16ff5ca7dcf6a44f8
Date Issue: 2004
Appears in Collections:Unicamp - Artigos e Outros Documentos

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