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|Type:||Artigo de evento|
|Title:||Morphological And Electrical Study Of Poly-sige Alloy Deposited By Vertical Lpcvd|
|Abstract:||In this paper authors report morphological and deposition analysis of polySiGe thin films by means of AFM, SEM and Raman measurements and electrical characteristics of MOS capacitors using poly-SiGe electrodes. The samples were deposited in a pancake vertical LPCVD system using Silane and Germane as precursor gases in a Hydrogen carrier flow. The process pressure was 5 or 10 Torr, in a temperature range from 500°C to 750°C. Surface RMS roughness, grain size and deposition rate are evaluated. We found that very uniform films can be obtained, with rms roughness below 4 nm and grain size below 50 nm. Deposition rates as high as 1500 Å/min are achieved. The deposited samples presented Rs values well bellow similar poly-Si films and electrical characterization shows poly-SiGe as a suitable material for MOS devices.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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