Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/94014
Type: Artigo de evento
Title: Morphological And Electrical Study Of Poly-sige Alloy Deposited By Vertical Lpcvd
Author: Teixeira R.C.
Doi I.
Zakia M.B.P.
Diniz J.A.
Abstract: In this paper authors report morphological and deposition analysis of polySiGe thin films by means of AFM, SEM and Raman measurements and electrical characteristics of MOS capacitors using poly-SiGe electrodes. The samples were deposited in a pancake vertical LPCVD system using Silane and Germane as precursor gases in a Hydrogen carrier flow. The process pressure was 5 or 10 Torr, in a temperature range from 500°C to 750°C. Surface RMS roughness, grain size and deposition rate are evaluated. We found that very uniform films can be obtained, with rms roughness below 4 nm and grain size below 50 nm. Deposition rates as high as 1500 Å/min are achieved. The deposited samples presented Rs values well bellow similar poly-Si films and electrical characterization shows poly-SiGe as a suitable material for MOS devices.
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Rights: fechado
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Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-31844438333&partnerID=40&md5=f6c195efb95184812bed2f846c10858e
Date Issue: 2005
Appears in Collections:Unicamp - Artigos e Outros Documentos

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