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|Type:||Artigo de evento|
|Title:||Thermal Stability Of Ni/pt Silicide Films On Bf Doped And Undoped (100)si|
Dos Santos S.G.
|Abstract:||Formation and stability of Ni suicide grown with a thin Pt interlayer onto BF doped and undoped silicon wafer have been investigated in the temperature range of 500°C to 900°C, using Scanning Electron Microscopy (SEM) with an Energy Dispersive Spectroscopy (EDS) and four point probe to characterize the surface, morphology and electrical properties. The samples were prepared by evaporation of Pt(15 nm) and Ni(30 nm) sequentially onto the substrate, and suicide formation performed by rapid thermal processing in N2 ambient. BF doping improves the thermal stability of Ni(Pt)Si from 800°C observed for undoped Si substrate to 850°C, with the almost same low sheet resistance values of 6 ω/Sq to 7 ω/Sq.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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