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Type: Artigo de evento
Title: Microwave Enhanced Silicon Koh Etching
Author: Fischer C.
Diniz J.A.
Abstract: A microwave source system have been used to increase silicon etch rate in KOH solution by a factor of about 2, when compared to conventional process. In this work, using a commercial microwave oven (operated at 850W), a home-made microwave system and a polytetrafluoroethylene (PTFE) reactor, where the silicon etching is processed with KOH-water solution, were developed. Silicon wafers, previously oxidized and patterned with standard photo-lithographic process, were etched using 2.5, 5 and 10 M KOH-water solution. The process temperature was manually controlled. The etch solution passes through a heat exchanger for cooling purpose and is pumped back to the reactor. Etch rate of about 1.38 μm/min for the [100] silicon crystal plane and 2.7 nm/min for thermal silicon oxide was achieved.
Rights: fechado
Identifier DOI: 
Date Issue: 2005
Appears in Collections:Unicamp - Artigos e Outros Documentos

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