Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/93920
Type: Artigo de evento
Title: Growth And Characterization Of Silicon Nanocrystals Obtained By Ion Implantation
Author: Dias G.O.
Mestanza S.N.M.
Queiroz J.E.C.
Marins E.S.V.P.
Doi I.
Rodriguez E.
Tejero D.C.B.
Abstract: Experimental results on visible and near infrared photoluminescence (PL) at room temperature, Fourier transform infrared (FTIR) and high-resolution transmission electron microscopy (HRTEM), from Si nanocrystals (nc-Si) embedded in a SiO2 matrix, are reported herein. The samples containing nc-Si was obtained by ion implantation and annealing of thermally grown SiO 2, on a (100) silicon wafer. PL was measured for two groups of samples. One group consists of samples obtained by different implantation doses and annealing times. Another group consists of samples obtained by an unique dose and annealing time, subsequently treated with post-annealing gas treatments. For the first group, a peak at 663nm (1.87eV) was observed for all implantation doses and annealing times. Samples of the second group, treated with post-annealing at 450°C in environments of N2, H2 and forming gas (FG) showed an increasing of luminescence peak centered at 790nm (1.57eV). The post-annealing treatments showed that H2 gas has a better performance for enhancing the PL intensity.
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Rights: fechado
Identifier DOI: 
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-31744452009&partnerID=40&md5=ed9c52dce3b69b82729c388742244b58
Date Issue: 2005
Appears in Collections:Unicamp - Artigos e Outros Documentos

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