Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/93916
Type: Artigo de evento
Title: Silicon Oxide Sacrificial Layer For Mems Applications
Author: Biasotto C.
Boscoli F.A.
Teixeira R.C.
Ramos A.C.S.
Diniz J.A.
Daltrini A.M.
Moshkalyov S.A.
Doi I.
Abstract: Silicon oxide (SiO2) insulators have been deposited by electron cyclotron resonance (ECR) plasma on Si substrate at room temperature (20°C). Optical emission spectrometry (OES) was used for plasma characterization, and intense formation of OH molecules in the gas phase was detected. Chemical bonds of the SiO2 films were evaluated using Fourier Transform Infra- Red spectrometry (FTIR), which revealed the presence of Si-O, Si-Si and O-H bonds. The refractive indexes between 1.45 and 1.64 and the thickness between 326 nm and 506 nm were measured by ellipsometry. With these values, the deposition rates of 16 to 25 nm/min and the BHF etch rates higher than 1 μm/min were determined. The silicon oxide, which presented low resistance to BHF etching, were used as sacrificial layers for microelectro-mechanical systems (MEMS) applications. Scanning Electron Microscopy (SEM) inspection was used to investigate the suspended structures, which were formed using these oxides. The results indicated that formed SiO2 films are suitable sacrificial layers for MEMS.
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Rights: fechado
Identifier DOI: 
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-31744448569&partnerID=40&md5=1f1a3b88ad4b49234268a85935ce1d50
Date Issue: 2005
Appears in Collections:Unicamp - Artigos e Outros Documentos

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