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|Type:||Artigo de periódico|
Artigo de periódico
|Title:||Resonant Magnetic Tunnel Junction At 0° K: I-v Characteristics And Magnetoresistance|
|Abstract:||In this paper we analyze the main transport properties of a simple resonant magnetic tunnel junction (FM-IS-METAL-IS-FM structure) taking into account both elastic and magnon-assisted tunneling processes at low voltages and temperatures near 0° K. We show the possibility of magnetoresistance inversion as a consequence of inelastic processes and spin-dependent transmission coefficients. Resonant tunneling can also explain the effect of scattering by impurities located inside an insulating barrier. © 2005 American Institute of Physics.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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