Please use this identifier to cite or link to this item:
|Type:||Artigo de evento|
|Title:||Phenomenological Characterization Of Photoactive Centers In Undoped Bi 12tio20 Crystals Using Optical And Electrical Techniques|
Inocente Jr. N.R.
Dos Santos P.V.
|Abstract:||We report optical and electrical measurements contributing for a better characterization of the relevant photoactive center levels in undoped photorefractive Bi12TiO20 (BTO) crystals grown in Brazil. A center responsible for photochromism was identified at about 0.42eV, probably below the conduction band (CB). Two other defect, centers were clearly identified at 0.17 eV and at 0.60 eV. Different centers between 1.0 and 0.85, probably above the valence band (VB), were mesured using different techniques which probably correspond to the same electron-acceptor defect responsible for dark p-conductivity which was already reported in the literature. Classical photoconductivity experiments indicated electron-donor centers at least at about 2.2 and 2.5 eV. Holographic techniques indicated the presence of at least two photoactive centers closer than 1.6 eV from CB, one of which could be an empty one.|
|Editor:||Optical Society of American (OSA)|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.