Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/93461
Type: Artigo de evento
Title: Low Electrical Resistivity Polycrystalline Sige Films Obtained By Vertical Lpcvd For Mos Devices
Author: Teixeira R.C.
Doi I.
Zakia M.B.P.
Diniz J.A.
Swart J.W.
Abstract: In this study, authors present some morphological and electrical characterization of polycrystalline SiGe thin films (poly-SiGe) deposited by vertical LPCVD using SiH 4, GeH 4 and H 2 mixture in different deposition parameters aiming for MOS gate electrodes. The obtained thin films are very uniform and smooth, with small grain size, feasible to deep submicrom fabrication. The SiGe samples presented resistivity values as low as 0.42 mΩ cm, one order of magnitude lower than poly-Si reference samples. CV and IV measurements points this poly-SiGe as a suitable material for MOS gate electrodes. © 2005 Elsevier B.V. All rights reserved.
Editor: 
Rights: fechado
Identifier DOI: 10.1016/j.mseb.2005.08.060
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-27944441803&partnerID=40&md5=57c808b251713f73f7febca3cca9d45a
Date Issue: 2005
Appears in Collections:Unicamp - Artigos e Outros Documentos

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