Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/93335
Type: Artigo de evento
Title: Shunt-zero Based On Cmos Split-drain: A Practical Approach For Current Sensing
Author: Castaldo F.C.
Rodrigues P.
Reis Filho C.A.
Abstract: A current sensor circuit intended for integrated Smart-Power applications featuring galvanic isolation is devised. It is based on magnetic detection using the CMOS compatible Split-Drain transistors (MAGFET) that provides linear output current versus magnetic field from DC to several MHz range. An integrated sensor built in 0.35μm CMOS technology presented an output conversion factor of 500nA/A, corner frequency around 1MHz and thermal spectral density of 60pA/√Hz for a power dissipation of less than 15mW. © 2005 IEEE.
Editor: 
Rights: fechado
Identifier DOI: 10.1109/PESC.2005.1581866
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-33847715029&partnerID=40&md5=4a5da60dd556d236b875340b9774387e
Date Issue: 2005
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File Description SizeFormat 
2-s2.0-33847715029.pdf1.07 MBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.