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|Type:||Artigo de evento|
|Title:||Shunt-zero Based On Cmos Split-drain: A Practical Approach For Current Sensing|
Reis Filho C.A.
|Abstract:||A current sensor circuit intended for integrated Smart-Power applications featuring galvanic isolation is devised. It is based on magnetic detection using the CMOS compatible Split-Drain transistors (MAGFET) that provides linear output current versus magnetic field from DC to several MHz range. An integrated sensor built in 0.35μm CMOS technology presented an output conversion factor of 500nA/A, corner frequency around 1MHz and thermal spectral density of 60pA/√Hz for a power dissipation of less than 15mW. © 2005 IEEE.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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