Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/93330
Type: Artigo de evento
Title: Structural Investigation Of Inas/ingaas/inp Nanostructures: Origin And Stability Of Nanowires
Author: Nieto L.
Gutierrez H.R.
Bortoleto J.R.R.
Magalhaes-Paniago R.
Cotta M.A.
Abstract: In this letter we present results on the growth of InAs nanowires (NW's) on InGaAs lattice-matched to (100) InP substrates by Chemical Beam Epitaxy. We observed that the nanostructure stability depends on the thickness of the InGaAs layer. This effect may result from two different conditions: the nanostructure strain field depth and/or compositional modulation in the buffer layer. Our investigation shows that anisotropic strain relaxation for nanowires grown on InGaAs is faster than for those grown on InP but the elastic energy in the nanostructures is no different from the InAs/InP case. These results suggest that the InAs strain relaxation does not depend significantly on the InGaAs buffer layer thickness. Nevertheless, transmission electron microscopy images show an additional stress field superimposed on that usually observed for the InAs nanostructures, which is attributed to compositional modulation in the ternary layer. © 2005 Materials Research Society.
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Rights: fechado
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Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-20344364147&partnerID=40&md5=1c92d969625432f6d91a6f7121b40f93
Date Issue: 2005
Appears in Collections:Unicamp - Artigos e Outros Documentos

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