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|Type:||Artigo de evento|
|Title:||Charge Buildup Effects In Asymmetric P-type Resonant Tunneling Diodes|
|Author:||Galvao Gobato Y.|
De Carvalho H.B.
Dos Santos L.F.
|Abstract:||We have investigated p-doped GaAs-AlAs resonant tunneling devices with asymmetric barriers under optical excitation. Transport and photoluminescence measurements were performed under identical bias conditions as a function of the light excitation intensity. We have observed the development of additional peaks, induced by illumination, between the main light- and heavy-hole resonances in the current-voltage characteristics (I(V)). We describe the behavior of these photo-induced peaks under a magnetic field parallel to the current. We propose that the observed properties are related to resonant tunneling of photoinduced electrons and associated excitonic effects. © 2005 Elsevier Ltd. All rights reserved.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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