Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/93086
Type: Artigo de evento
Title: Charge Buildup Effects In Asymmetric P-type Resonant Tunneling Diodes
Author: Galvao Gobato Y.
Brasil M.J.S.P.
Camps I.
De Carvalho H.B.
Dos Santos L.F.
Marques G.E.
Henini M.
Eaves L.
Hill G.
Abstract: We have investigated p-doped GaAs-AlAs resonant tunneling devices with asymmetric barriers under optical excitation. Transport and photoluminescence measurements were performed under identical bias conditions as a function of the light excitation intensity. We have observed the development of additional peaks, induced by illumination, between the main light- and heavy-hole resonances in the current-voltage characteristics (I(V)). We describe the behavior of these photo-induced peaks under a magnetic field parallel to the current. We propose that the observed properties are related to resonant tunneling of photoinduced electrons and associated excitonic effects. © 2005 Elsevier Ltd. All rights reserved.
Editor: 
Rights: fechado
Identifier DOI: 10.1016/j.mejo.2005.02.055
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-33644535133&partnerID=40&md5=88e3310dc01a0c91a6fae71d19f3bdec
Date Issue: 2005
Appears in Collections:Unicamp - Artigos e Outros Documentos

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