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|Type:||Artigo de periódico|
|Title:||Probing Individual Quantum Dots: Noise In Self-assembled Systems|
|Abstract:||In this work we explore the noise characteristics in lithographically- defined two terminal devices containing self-assembled InAs/lnP quantum dots. The experimental ensemble of InAs dots show random telegraph noise (RTN) with tuneable relative amplitude-up to 150%-in well defined temperature and source-drain applied voltage ranges. Our numerical simulation indicates that the RTN signature correlates with a very low number of quantum dots acting as effective charge storage centres in the structure for a given applied voltage. The modulation in relative amplitude variation can thus be associated to the altered electrostatic potential profile around such centres and enhanced carrier scattering provided by a charged dot. Copyright © 2009 American Scientific Publishers.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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